impact ionization

Impact ionization is often attributed to be the cause of breakdown.

Both positive and negative streamer grow by impact ionization in this high field region.

The reverse effect is known as impact ionization.

In some sense, impact ionization is the reverse process to Auger recombination.

An important example is impact ionization, where an electron ionizes a neutral molecule.

Electron impact ionization is the most common technique for characterizing the neutral metal carbonyls.

In each stage, the electrons are multiplied by impact ionization in a similar way to an avalanche diode.

The photoelectron subsequently causes the emission of secondary electrons through the process of impact ionization.

Impact ionization is the process in a material by which one energetic charge carrier can lose energy by the creation of other charge carriers.

To get impact ionization the electron energy must become greater than the ionization energy of the gas atoms between the plates.

As t increases, the voltage goes above the breakdown voltage and secondary electron-hole pairs are produced by impact ionization.

These electrons collide with and ionize noble gas atoms inside the bulb surrounding the filament to form a plasma by the process of impact ionization.

The primary beam can transfer energy to electrons via elastic collisions with electrons and via inelastic collision processes such as impact ionization.

At the breakdown field, there is a balance between the production of new electrons (due to impact ionization) and the loss of electrons (due to attachment).

These include models for impact ionization of neutral gases by electrons and ions and field-induced tunneling ionization of atoms.

(So the number of free electrons at the anode is equal to the number of free electrons at the cathode that were multiplied by impact ionization.

Temperature of the source was held at 250 C and of the quadropole at 120 C. The ion source was set on positive electron impact ionization mode.

For an electron multiplication device it is given by the hole impact ionization rate divided by the electron impact ionization rate.

Avalanche mode switching relies on avalanche multiplication of current flowing through the collector-base junction as a result of impact ionization of the atoms in the semiconductor crystal lattice.

From 1970 until 1974, he was a research assistant in the MPIK, developing dust detectors for spaceborne missions and doing research on impact ionization for these dust detectors.

An IMPATT diode (IMPact ionization Avalanche Transit-Time) is a form of high-power diode used in high-frequency electronics and microwave devices.

Caesium vapor is used to optimize the electrode work functions and provide an ion supply (by surface contact ionization or electron impact ionization in a plasma) to neutralize the electron space charge.

Low fragmentation: Only a small amount of energy is transferred during the ionization process (compared to e.g. electron impact ionization), therefore fragmentation is suppressed and the obtained mass spectra are easily interpretable.

An electron avalanche is a process in which a number of free electrons in a medium (usually a gas) are subjected to strong acceleration by an electric field, and subsequently collide with other atoms of the medium and thereby ionize them in a process called impact ionization.

The current amplification mechanism is the same of the avalanche transistor, i.e. carrier generation by impact ionization, but there is also a transit-time effect as in IMPATT and TRAPATT diodes, where a high-field region travels along the avalanching junction, precisely in along the intrinsic region.